Effects of electron confinement on thermionic emission current in a modulation doped heterostructure

被引：95

作者：

Anwar, A ^{[1
]}

Nabet, B ^{[1
]}

Culp, J ^{[1
]}

Castro, F ^{[1
]}

机构：

[1] Drexel Univ, Dept Elect & Comp Engn, Philadelphia, PA 19104 USA

来源：

JOURNAL OF APPLIED PHYSICS | 1999年 / 85卷 / 05期

关键词：

D O I：

10.1063/1.369627

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We discuss mechanisms responsible for the reduction of electron thermionic emission current from a Schottky contact to a modulation doped semiconductor compared to a bulk semiconductor. The effects discussed include metal to semiconductor barrier height enhancement due to proposed electron-electron cloud interaction, confined potential of the reduced dimensional systems, and the reduced dimensional nature of the density of states in the semiconductor. These effects describe the observed lowering of the dark current, and hence noise, of a modulation doped heterojunction based photodetector compared to a conventional bulk device. (C) 1999 American Institute of Physics. [S0021-8979(99)04605-8].

引用

页码：2663 / 2666

页数：4

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