ENHANCEMENT OF EFFECTIVE SCHOTTKY-BARRIER HEIGHT ON NORMAL-TYPE INP

被引：11

作者：

HO, MC

HE, Y

CHIN, TP

LIANG, BW

TU, CW

机构：

[1] Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla

来源：

ELECTRONICS LETTERS | 1992年 / 28卷 / 01期

关键词：

SCHOTTKY CONTACTS; SEMICONDUCTOR GROWTH; SEMICONDUCTOR DEVICES AND MATERIALS;

D O I：

10.1049/el:19920043

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The effective Schottky barrier height on n-type InP is increased by a thin heavily-doped p-type surface layer grown by gas-source molecular beam epitaxy. The relationships between the barrier height increment and the doping level and thickness of the surface layer have been studied. The Schottky diodes fabricated by this method show reasonably low leakage current at high reverse bias and high reverse break-down voltage.

引用

页码：68 / 71

页数：4

共 11 条

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