LOW-TEMPERATURE DC CHARACTERISTICS OF PSEUDOMORPHIC GA0.18IN0.82P/INP/GA0.47-IN0.53AS HEMT

被引：20

作者：

LOUALICHE, S

GINUDI, A

LECORRE, A

LECROSNIER, D

VAUDRY, C

HENRY, L

GUILLEMOT, C

机构：

[1] France Telecom, Centre National d’Etudes des Télécommunications (CNET)

来源：

IEEE ELECTRON DEVICE LETTERS | 1990年 / 11卷 / 04期

关键词：

D O I：

10.1109/55.61773

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A high gap strained GaInP material has been chosen to increase Schottky barrier height on InP. This material has been used for the first time in high electron mobility transistor (HEMT) fabrication on InP (Fig. 1). For these devices the best gm of a 1.3-μm gate HEMT is 300 mS/mm. Transistors of 3-¼m gate length are studied at low temperature (100 to 293 K). Their dc electrical characteristics improve upon cooling. The best improvement is measured at the lowest temperature (+ 54% for gm at 105 K). The structure is stable and does not present any gm or Ids collapse at low temperature, unlike AlGaAs/GaAs heterostructure. © 1990 IEEE

引用

页码：153 / 155

页数：3

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