Local structure of random InxGa1-xAs alloys by full-profile fitting of atomic pair distribution functions

被引：13

作者：

Petkov, V ^{[1
]}

Billinge, SJL

机构：

[1] Michigan State Univ, Dept Phys & Astron, E Lansing, MI 48823 USA

[2] Michigan State Univ, Ctr Fundamental Mat Res, E Lansing, MI 48823 USA

来源：

PHYSICA B-CONDENSED MATTER | 2001年 / 305卷 / 01期

基金：

美国国家科学基金会; 美国能源部;

关键词：

InxGa1-xAs; local structure; atomic pair distribution;

D O I：

10.1016/S0921-4526(01)00551-8

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The local structure of random InxGa1-xAs alloys has been refined by fitting experimental high-resolution atomic pair distribution functions with the 8-atom unit cell of the zinc-blende lattice. Both metal and As atoms have been allowed to move off their ideal positions and so the local structural disorder due to the presence of two distinct bond lengths, Ga-As and In-As, has been quantified. It has been found that most of the disorder is accommodated by the As sublattice but the disorder on metal sites is important too. This new experimental information has been incorporated into a larger, statistically representative, model of In0.5Ga0.5As structure using widely available crystallographic software. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：83 / 89

页数：7

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