ARTIFICIALLY STRUCTURED THIN-FILM MATERIALS AND INTERFACES

[1] STRAINED-LAYER EPITAXY OF GERMANIUM-SILICON ALLOYS [J]. SCIENCE, 1985, 230 (4722) : 127 - 131

[2] TUNNELING IMAGES OF THE 5X5 SURFACE RECONSTRUCTION ON GE-SI(111) [J]. PHYSICAL REVIEW B, 1985, 32 (12): : 8455 - 8457

[3] TUNNELING IMAGES OF GERMANIUM SURFACE RECONSTRUCTIONS AND PHASE BOUNDARIES [J]. PHYSICAL REVIEW LETTERS, 1985, 54 (25) : 2678 - 2680

[4] GE-SI LAYERED STRUCTURES - ARTIFICIAL CRYSTALS AND COMPLEX CELL ORDERED SUPERLATTICES [J]. APPLIED PHYSICS LETTERS, 1986, 49 (05) : 286 - 288

[5] 7X7 RECONSTRUCTION ON SI(111) RESOLVED IN REAL SPACE [J]. PHYSICAL REVIEW LETTERS, 1983, 50 (02) : 120 - 123

[6] QUANTUM-WELL RESONANT TUNNELING BIPOLAR-TRANSISTOR OPERATING AT ROOM-TEMPERATURE [J]. IEEE ELECTRON DEVICE LETTERS, 1986, 7 (10) : 573 - 576

[7] BAND-GAP ENGINEERING - FROM PHYSICS AND MATERIALS TO NEW SEMICONDUCTOR-DEVICES [J]. SCIENCE, 1987, 235 (4785) : 172 - 176

[8] EVIDENCE FOR LOW SURFACE RECOMBINATION VELOCITY ON N-TYPE INP [J]. APPLIED PHYSICS LETTERS, 1977, 30 (05) : 247 - 249

[9] Chang L.L., 1980, MOL BEAM EPITAXY, P15

[10] GROWTH OF III-V SEMICONDUCTORS BY MOLECULAR-BEAM EPITAXY AND THEIR PROPERTIES [J]. THIN SOLID FILMS, 1983, 100 (04) : 291 - 317

[1] STRAINED-LAYER EPITAXY OF GERMANIUM-SILICON ALLOYS [J]. SCIENCE, 1985, 230 (4722) : 127 - 131

[2] TUNNELING IMAGES OF THE 5X5 SURFACE RECONSTRUCTION ON GE-SI(111) [J]. PHYSICAL REVIEW B, 1985, 32 (12): : 8455 - 8457

[3] TUNNELING IMAGES OF GERMANIUM SURFACE RECONSTRUCTIONS AND PHASE BOUNDARIES [J]. PHYSICAL REVIEW LETTERS, 1985, 54 (25) : 2678 - 2680

[4] GE-SI LAYERED STRUCTURES - ARTIFICIAL CRYSTALS AND COMPLEX CELL ORDERED SUPERLATTICES [J]. APPLIED PHYSICS LETTERS, 1986, 49 (05) : 286 - 288

[5] 7X7 RECONSTRUCTION ON SI(111) RESOLVED IN REAL SPACE [J]. PHYSICAL REVIEW LETTERS, 1983, 50 (02) : 120 - 123

[6] QUANTUM-WELL RESONANT TUNNELING BIPOLAR-TRANSISTOR OPERATING AT ROOM-TEMPERATURE [J]. IEEE ELECTRON DEVICE LETTERS, 1986, 7 (10) : 573 - 576

[7] BAND-GAP ENGINEERING - FROM PHYSICS AND MATERIALS TO NEW SEMICONDUCTOR-DEVICES [J]. SCIENCE, 1987, 235 (4785) : 172 - 176

[8] EVIDENCE FOR LOW SURFACE RECOMBINATION VELOCITY ON N-TYPE INP [J]. APPLIED PHYSICS LETTERS, 1977, 30 (05) : 247 - 249

[9] Chang L.L., 1980, MOL BEAM EPITAXY, P15

[10] GROWTH OF III-V SEMICONDUCTORS BY MOLECULAR-BEAM EPITAXY AND THEIR PROPERTIES [J]. THIN SOLID FILMS, 1983, 100 (04) : 291 - 317