Silicon resonant cavity enhanced photodetector based on the internal photoemission effect at 1.55 μm:: Fabrication and characterization

被引：52

作者：

Casalino, M. ^{[1
]}

Sirleto, L. ^{[1
]}

Moretti, L. ^{[2
]}

Gioffre, M. ^{[1
]}

Coppola, G. ^{[1
]}

Rendina, Ivo ^{[1
]}

机构：

[1] CNR, Inst Microelect & Microsyst, I-80131 Naples, Italy

[2] Univ Mediterranea, I-89060 Reggio Di Calabria, Italy

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 25期

关键词：

D O I：

10.1063/1.2952193

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this paper, the realization and the characterization of a resonant cavity enhanced (RCE) photodetector, completely silicon compatible and working at 1.55 mu m, are reported. The detector is a RCE structure incorporating a Schottky diode and its working principle is based on the internal photoemission effect. Taking advantage of a Cu/Si Schottky diode fed on a high reflectivity Bragg mirror, an improvement in responsivity at 1.55 mu m is experimentally demonstrated. (C) 2008 American Institute of Physics.

引用

页数：3

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