A silicon compatible resonant cavity enhanced photodetector working at 1.55 μm

被引：42

作者：

Casalino, M. ^{[1
]}

Sirleto, L. ^{[1
]}

Moretti, L. ^{[2
]}

Rendina, I. ^{[1
]}

机构：

[1] CNR, IMM, I-80131 Naples, Italy

[2] Univ Mediterranea Reggio Calabria, I-89060 Reggio Di Calabria, Italy

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2008年 / 23卷 / 07期

关键词：

D O I：

10.1088/0268-1242/23/7/075001

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, the design of a novel photodetector at 1.55 mu m, working at room temperature and completely silicon compatible, is reported. The device is a resonant cavity enhanced (RCE) structure incorporating a silicon photodetector based on the internal photoemission effect. In order to quantify the performance of photodetector, quantum efficiency including the image force effect, bandwidth and dark current as a function of bias voltage is numerically calculated. A comparison among three different Schottky barrier silicon photodetectors, having as metal layers gold, silver or copper respectively, is proposed. The highest efficiency (0.2%) but also the highest dark current is obtained with metal having the lowest barrier, while for all devices, values of the order of 100 GHz and 100 MHz were obtained, respectively, for the carrier transit time limited 3 dB bandwidth and bandwidth efficiency.

引用

页数：7

共 23 条

[1] On the internal photoemission spectrum of PtSi/p-Si infrared detectors [J].