Silicon substrates with buried distributed Bragg reflectors for resonant cavity-enhanced optoelectronics

被引：68

作者：

Emsley, MK ^{[1
]}

Dosunmu, O ^{[1
]}

Ünlü, MS ^{[1
]}

机构：

[1] Boston Univ, Dept Elect & Comp Engn, Boston, MA 02215 USA

来源：

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS | 2002年 / 8卷 / 04期

关键词：

distributed Bragg reflector; photodetector; resonant cavity enhanced; silicon; silicon on-insulator;

D O I：

10.1109/JSTQE.2002.801692

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report on a commercially reproducible silicon wafer with a high-reflectance buried distributed Bragg reflector (DBR). The substrate consists of a two-period DBR fabricated using a double silicon-on-insulator (SOI) process. The buried DBR provides a 90% reflecting surface. We have fabricated resonant cavity-enhanced Si photodetectors with 40% quantum efficiency at 860 nm and a full-width at half-maximum of 29 ps suitable for 10 Gbps data communications. We have also implemented double-SOI substrates with 90% reflectivity covering 1300 and 1550 nm for use in Si-based optoelectronics.

引用

页码：948 / 955

页数：8

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