HF-chemical etching of the oxide layer near a SiO2/Si(111) interface

被引：14

作者：

Miyata, N ^{[1
]}

Watanabe, H ^{[1
]}

Ichikawa, M ^{[1
]}

机构：

[1] Natl Inst Adv Interdisciplinary Res, Joint Res Ctr Atom Technol, Angstrom Technol Partnership, Ibaraki, Osaka 3050046, Japan

来源：

APPLIED PHYSICS LETTERS | 1998年 / 73卷 / 26期

关键词：

D O I：

10.1063/1.122937

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The HF-chemical etching process near the SiO2/Si(111) interface (<1 nm) is investigated by scanning reflection electron microscopy and microprobe Auger electron spectroscopy. The HF etching of the SiO2 layer thermally grown on an atomically flat Si(111)- 7x7 surface progresses in a layer-by-layer manner, and then the final layer of oxide (similar to 0.3 nm) is removed in a two-dimensional void expansion with the H-terminated Si surface. This very uniform HF etching is thought to reflect the structural anisotropy of the SiO2 layer formed near the SiO2/Si(111) interface. (C) 1998 American Institute of Physics. [S0003-6951(98)04752-4].

引用

页码：3923 / 3925

页数：3

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