Preservation of atomic flatness at SiO2/Si(111) interfaces during thermal oxidation in a furnace

被引：17

作者：

Miyata, N ^{[1
]}

Watanabe, H ^{[1
]}

Ichikawa, M ^{[1
]}

机构：

[1] Natl Inst Adv Interdisciplinary Res, Angstrom Technol Partnership, Joint Res Ctr Atom Technol, Ibaraki, Osaka 305, Japan

来源：

APPLIED PHYSICS LETTERS | 1998年 / 72卷 / 14期

关键词：

D O I：

10.1063/1.121161

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

SiO2/Si(111) interfaces formed by a furnace oxidation are studied by a scanning reflection electron microscopy (SREM). SREM observation indicates that the initial atomic steps on a Si(111) surface are preserved at the SiO2/Si interface and the interfacial steps do not move laterally even after 48-nm-thick oxidation. A profile analysis of reflection high-energy electron diffraction shows that the SiO2/Si interface consists of islands which have a diameter of about 5 nm and monolayer depth. Our results indicate that the layer-by-layer oxidation caused by two-dimensional island nucleation proceeds under furnace oxidation. (C) 1998 American Institute of Physics. [S0003-6951(98)00714-1].

引用

页码：1715 / 1717

页数：3

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