OXIDATION OF SILICON

被引：130

作者：

MOTT, NF

RIGO, S

ROCHET, F

STONEHAM, AM

机构：

[1] UNIV PARIS 07, ECOLE NORM SUPER, PHYS SOLIDES GRP, F-75251 PARIS 05, FRANCE

[2] HARWELL LAB, DIV THEORET PHYS, DIDCOT OX11 0RA, OXON, ENGLAND

来源：

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES | 1989年 / 60卷 / 02期

关键词：

D O I：

10.1080/13642818908211190

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：189 / 212

页数：24

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DEMAZEAU, G ;

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SINCLAIR, R .

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