HIGH-PRESSURE DRY OXIDATION-KINETICS OF SILICON - EVIDENCE OF A HIGHLY STRESSED SIO2 STRUCTURE

被引：12

作者：

CAMELIN, C ^{[1
]}

DEMAZEAU, G ^{[1
]}

STRABONI, A ^{[1
]}

BUEVOZ, JL ^{[1
]}

机构：

[1] CTR NATL ETUDES TELECOMMUN,F-38243 MEYLAN,FRANCE

来源：

APPLIED PHYSICS LETTERS | 1986年 / 48卷 / 18期

关键词：

D O I：

10.1063/1.96984

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1211 / 1213

页数：3

共 10 条

[1] GENERAL RELATIONSHIP FOR THERMAL OXIDATION OF SILICON [J].

DEAL, BE ;

GROVE, AS .

JOURNAL OF APPLIED PHYSICS, 1965, 36 (12) :3770-&

[2] DRY OXIDATION OF SILICON - A NEW MODEL OF GROWTH INCLUDING RELAXATION OF STRESS BY VISCOUS-FLOW [J].

FARGEIX, A ;

GHIBAUDO, G .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (12) :7153-7158

[3] A REVISED ANALYSIS OF DRY OXIDATION OF SILICON [J].

FARGEIX, A ;

GHIBAUDO, G ;

KAMARINOS, G .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (05) :2878-2880

[4] ELLIPSOMETRIC ANALYSIS OF THIN SILICON DIOXIDE LAYERS [J].

GED, P ;

VAREILLE, A ;

BOIS, D .

THIN SOLID FILMS, 1982, 91 (04) :327-334

[5] THERMAL-OXIDATION OF SILICON - CHEMISORPTION AND LINEAR RATE-CONSTANT [J].

HU, SM .

JOURNAL OF APPLIED PHYSICS, 1984, 55 (11) :4095-4105

[6] HIGH-PRESSURE OXIDATION OF SILICON IN DRY OXYGEN [J].

LIE, LN ;

RAZOUK, RR ;

DEAL, BE .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (12) :2828-2834

[7] THERMAL-OXIDATION OF SILICON IN DRY OXYGEN - GROWTH-RATE ENHANCEMENT IN THE THIN REGIME .2. PHYSICAL-MECHANISMS [J].

MASSOUD, HZ ;

PLUMMER, JD ;

IRENE, EA .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (11) :2693-2700

[8]

MASSOUD HZ, 1983, G5021 STANDF U TECH

[9] X-RAY CHARACTERIZATION OF STRESSES AND DEFECTS IN THIN-FILMS AND SUBSTRATES [J].

ROZGONYI, GA ;

MILLER, DC .

THIN SOLID FILMS, 1976, 31 (1-2) :185-216

[10] LOW-TEMPERATURE THERMAL OXIDATION OF SILICON BY DRY OXYGEN-PRESSURE ABOVE 1-ATM [J].

ZETO, RJ ;

THORNTON, CG ;

HRYCKOWIAN, E ;

BOSCO, CD .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (10) :1409-1410

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