THERMAL-OXIDATION OF SILICON - CHEMISORPTION AND LINEAR RATE-CONSTANT

被引:36
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HU, SM
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10.1063/1.333000
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O59 [应用物理学];
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页码:4095 / 4105
页数:11
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[1]   THE GROWTH AND CHARACTERIZATION OF VERY THIN SILICON DIOXIDE FILMS [J].
ADAMS, AC ;
SMITH, TE ;
CHANG, CC .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (08) :1787-1794
[2]   OXIDATION-INDUCED POINT-DEFECTS IN SILICON [J].
ANTONIADIS, DA .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (05) :1093-1097
[3]   SURFACE STATES AND RECTIFICATION AT A METAL SEMI-CONDUCTOR CONTACT [J].
BARDEEN, J .
PHYSICAL REVIEW, 1947, 71 (10) :717-727
[4]   DOPED OXIDES AS DIFFUSION SOURCES .I. BORON INTO SILICON [J].
BARRY, ML ;
OLOFSEN, P .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (06) :854-&
[5]   SIMPLE VALENCE FORCE FIELD-BOND ENERGY BOND ORDER (SVFF-BEBO) MODEL FOR CHEMISORPTION OF OXYGEN ON SI(111) [J].
BHANDIA, AS ;
SCHWARZ, JA .
SURFACE SCIENCE, 1981, 108 (03) :587-604
[6]   REVISED MODEL FOR OXIDATION OF SI BY OXYGEN [J].
BLANC, J .
APPLIED PHYSICS LETTERS, 1978, 33 (05) :424-426
[7]  
CHEN CL, 1982, IEEE T ELECTRON DEV, V29, P1522, DOI 10.1109/T-ED.1982.20909
[8]   THEORETICAL AND EXPERIMENTAL INVESTIGATIONS OF THE ELECTRONIC-STRUCTURE OF OXYGEN ON SILICON [J].
CHEN, M ;
BATRA, IP ;
BRUNDLE, CR .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05) :1216-1220
[9]   GENERAL RELATIONSHIP FOR THERMAL OXIDATION OF SILICON [J].
DEAL, BE ;
GROVE, AS .
JOURNAL OF APPLIED PHYSICS, 1965, 36 (12) :3770-&
[10]   THERMAL OXIDATION OF HEAVILY DOPED SILICON [J].
DEAL, BE ;
SKLAR, M .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1965, 112 (04) :430-+