THE OXIDATION OF SILICON BY DRY OXYGEN - CAN WE DISTINGUISH BETWEEN MODELS

被引：42

作者：

BLANC, J ^{[1
]}

机构：

[1] RCA LABS,PRINCETON,NJ 08543

来源：

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES | 1987年 / 55卷 / 06期

关键词：

D O I：

10.1080/13642818708218374

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：685 / 710

页数：26

共 30 条

[1]

AMSEL G, 1980, PHYSIQUE CONT

[2]

Bendat J. S., 1971, RANDOM DATA ANAL MEA

[3]

Bevington P., 1969, DATA REDUCTION ERROR

[4] REVISED MODEL FOR OXIDATION OF SI BY OXYGEN [J].

BLANC, J .

[5]

BLANC J, 1986, FAL M EL SOC PENN, V86, P542

[6]

BLANC J, 1978, SEMICONDUCTOR CHARAC, P139

[7]

COSTELLO JA, 1984, J ELECTROCHEM SOC, V131, P914

[8]

DEAL BE, 1965, J APPL PHYS, V36, P1965

[9] VISCOUS-FLOW OF THERMAL SIO2 [J].

EERNISSE, EP .

FARGEIX, A ;

GHIBAUDO, G .