THE OXIDATION OF SILICON BY DRY OXYGEN - CAN WE DISTINGUISH BETWEEN MODELS

被引:42
作者
BLANC, J [1 ]
机构
[1] RCA LABS,PRINCETON,NJ 08543
来源
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES | 1987年 / 55卷 / 06期
关键词
D O I
10.1080/13642818708218374
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:685 / 710
页数:26
相关论文
共 30 条
[11]   ROLE OF STRESS ON THE PARABOLIC KINETIC CONSTANT FOR DRY SILICON OXIDATION [J].
FARGEIX, A ;
GHIBAUDO, G .
JOURNAL OF APPLIED PHYSICS, 1984, 56 (02) :589-591
[12]   EXPERIMENTAL-OBSERVATIONS OF CHEMISTRY OF SIO2-SI INTERFACE [J].
GRUNTHANER, FJ ;
MASERJIAN, J .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1977, 24 (06) :2108-2112
[13]   ISOTOPIC TRACER STUDIES OF OXYGEN-TRANSPORT THROUGH SIO2-FILMS AT 1000-DEGREES-C USING SECONDARY ION MASS-SPECTROMETRY [J].
HAN, CJ ;
HELMS, CR .
JOURNAL OF APPLIED PHYSICS, 1986, 59 (05) :1767-1769
[14]  
HAN CJ, 1986, SEMICONDUCTOR SILICO, P408
[15]   SI-SIO2 INTERFACE OXIDATION-KINETICS - PHYSICAL MODEL FOR THE INFLUENCE OF HIGH SUBSTRATE DOPING LEVELS .2. COMPARISON WITH EXPERIMENT AND DISCUSSION [J].
HO, CP ;
PLUMMER, JD .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (09) :1523-1530
[16]   SI-SIO2 INTERFACE OXIDATION-KINETICS - PHYSICAL MODEL FOR THE INFLUENCE OF HIGH SUBSTRATE DOPING LEVELS .1. THEORY [J].
HO, CP ;
PLUMMER, JD .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (09) :1516-1522
[17]   THERMAL OXIDATION OF SILICON - INSITU MEASUREMENT OF GROWTH-RATE USING ELLIPSOMETRY [J].
HOPPER, MA ;
CLARKE, RA ;
YOUNG, L .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (09) :1216-1222
[18]   Silicon Oxidation Studies: The Role of H2O [J].
Irene, E. A. ;
Ghez, R. .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (11) :1757-1761
[19]   SILICON OXIDATION STUDIES - ANALYSIS OF SIO2 FILM GROWTH DATA [J].
IRENE, EA ;
VANDERMEULEN, YJ .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (09) :1380-1384
[20]   KINETICS OF ULTRATHIN SIO2 GROWTH [J].
MURALI, V ;
MURARKA, SP .
JOURNAL OF APPLIED PHYSICS, 1986, 60 (06) :2106-2114