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THE OXIDATION OF SILICON BY DRY OXYGEN - CAN WE DISTINGUISH BETWEEN MODELS
被引:42
作者
:
BLANC, J
论文数:
0
引用数:
0
h-index:
0
机构:
RCA LABS,PRINCETON,NJ 08543
RCA LABS,PRINCETON,NJ 08543
BLANC, J
[
1
]
机构
:
[1]
RCA LABS,PRINCETON,NJ 08543
来源
:
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES
|
1987年
/ 55卷
/ 06期
关键词
:
D O I
:
10.1080/13642818708218374
中图分类号
:
T [工业技术];
学科分类号
:
08 ;
摘要
:
引用
收藏
页码:685 / 710
页数:26
相关论文
共 30 条
[11]
ROLE OF STRESS ON THE PARABOLIC KINETIC CONSTANT FOR DRY SILICON OXIDATION
[J].
FARGEIX, A
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0
引用数:
0
h-index:
0
FARGEIX, A
;
GHIBAUDO, G
论文数:
0
引用数:
0
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0
GHIBAUDO, G
.
JOURNAL OF APPLIED PHYSICS,
1984,
56
(02)
:589
-591
[12]
EXPERIMENTAL-OBSERVATIONS OF CHEMISTRY OF SIO2-SI INTERFACE
[J].
GRUNTHANER, FJ
论文数:
0
引用数:
0
h-index:
0
GRUNTHANER, FJ
;
MASERJIAN, J
论文数:
0
引用数:
0
h-index:
0
MASERJIAN, J
.
IEEE TRANSACTIONS ON NUCLEAR SCIENCE,
1977,
24
(06)
:2108
-2112
[13]
ISOTOPIC TRACER STUDIES OF OXYGEN-TRANSPORT THROUGH SIO2-FILMS AT 1000-DEGREES-C USING SECONDARY ION MASS-SPECTROMETRY
[J].
HAN, CJ
论文数:
0
引用数:
0
h-index:
0
HAN, CJ
;
HELMS, CR
论文数:
0
引用数:
0
h-index:
0
HELMS, CR
.
JOURNAL OF APPLIED PHYSICS,
1986,
59
(05)
:1767
-1769
[14]
HAN CJ, 1986, SEMICONDUCTOR SILICO, P408
[15]
SI-SIO2 INTERFACE OXIDATION-KINETICS - PHYSICAL MODEL FOR THE INFLUENCE OF HIGH SUBSTRATE DOPING LEVELS .2. COMPARISON WITH EXPERIMENT AND DISCUSSION
[J].
HO, CP
论文数:
0
引用数:
0
h-index:
0
机构:
Integrated Circuits Laboratory, Stanford University, Stanford
HO, CP
;
PLUMMER, JD
论文数:
0
引用数:
0
h-index:
0
机构:
Integrated Circuits Laboratory, Stanford University, Stanford
PLUMMER, JD
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1979,
126
(09)
:1523
-1530
[16]
SI-SIO2 INTERFACE OXIDATION-KINETICS - PHYSICAL MODEL FOR THE INFLUENCE OF HIGH SUBSTRATE DOPING LEVELS .1. THEORY
[J].
HO, CP
论文数:
0
引用数:
0
h-index:
0
机构:
Integrated Circuits Laboratory, Stanford University, Stanford
HO, CP
;
PLUMMER, JD
论文数:
0
引用数:
0
h-index:
0
机构:
Integrated Circuits Laboratory, Stanford University, Stanford
PLUMMER, JD
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1979,
126
(09)
:1516
-1522
[17]
THERMAL OXIDATION OF SILICON - INSITU MEASUREMENT OF GROWTH-RATE USING ELLIPSOMETRY
[J].
HOPPER, MA
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV BRITISH COLUMBIA,DEPT ELECTR ENGN,VANCOUVER 8,BRITISH COLUMBI,CANADA
UNIV BRITISH COLUMBIA,DEPT ELECTR ENGN,VANCOUVER 8,BRITISH COLUMBI,CANADA
HOPPER, MA
;
CLARKE, RA
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0
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UNIV BRITISH COLUMBIA,DEPT ELECTR ENGN,VANCOUVER 8,BRITISH COLUMBI,CANADA
UNIV BRITISH COLUMBIA,DEPT ELECTR ENGN,VANCOUVER 8,BRITISH COLUMBI,CANADA
CLARKE, RA
;
YOUNG, L
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0
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UNIV BRITISH COLUMBIA,DEPT ELECTR ENGN,VANCOUVER 8,BRITISH COLUMBI,CANADA
UNIV BRITISH COLUMBIA,DEPT ELECTR ENGN,VANCOUVER 8,BRITISH COLUMBI,CANADA
YOUNG, L
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1975,
122
(09)
:1216
-1222
[18]
Silicon Oxidation Studies: The Role of H2O
[J].
Irene, E. A.
论文数:
0
引用数:
0
h-index:
0
机构:
IBM Thomas J Watson Res Ctr, Yorktown Hts, NY 10598 USA
IBM Thomas J Watson Res Ctr, Yorktown Hts, NY 10598 USA
Irene, E. A.
;
Ghez, R.
论文数:
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引用数:
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机构:
IBM Thomas J Watson Res Ctr, Yorktown Hts, NY 10598 USA
IBM Thomas J Watson Res Ctr, Yorktown Hts, NY 10598 USA
Ghez, R.
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1977,
124
(11)
:1757
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[19]
SILICON OXIDATION STUDIES - ANALYSIS OF SIO2 FILM GROWTH DATA
[J].
IRENE, EA
论文数:
0
引用数:
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IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IRENE, EA
;
VANDERMEULEN, YJ
论文数:
0
引用数:
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h-index:
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机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
VANDERMEULEN, YJ
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1976,
123
(09)
:1380
-1384
[20]
KINETICS OF ULTRATHIN SIO2 GROWTH
[J].
MURALI, V
论文数:
0
引用数:
0
h-index:
0
MURALI, V
;
MURARKA, SP
论文数:
0
引用数:
0
h-index:
0
MURARKA, SP
.
JOURNAL OF APPLIED PHYSICS,
1986,
60
(06)
:2106
-2114
←
1
2
3
→
共 30 条
[11]
ROLE OF STRESS ON THE PARABOLIC KINETIC CONSTANT FOR DRY SILICON OXIDATION
[J].
FARGEIX, A
论文数:
0
引用数:
0
h-index:
0
FARGEIX, A
;
GHIBAUDO, G
论文数:
0
引用数:
0
h-index:
0
GHIBAUDO, G
.
JOURNAL OF APPLIED PHYSICS,
1984,
56
(02)
:589
-591
[12]
EXPERIMENTAL-OBSERVATIONS OF CHEMISTRY OF SIO2-SI INTERFACE
[J].
GRUNTHANER, FJ
论文数:
0
引用数:
0
h-index:
0
GRUNTHANER, FJ
;
MASERJIAN, J
论文数:
0
引用数:
0
h-index:
0
MASERJIAN, J
.
IEEE TRANSACTIONS ON NUCLEAR SCIENCE,
1977,
24
(06)
:2108
-2112
[13]
ISOTOPIC TRACER STUDIES OF OXYGEN-TRANSPORT THROUGH SIO2-FILMS AT 1000-DEGREES-C USING SECONDARY ION MASS-SPECTROMETRY
[J].
HAN, CJ
论文数:
0
引用数:
0
h-index:
0
HAN, CJ
;
HELMS, CR
论文数:
0
引用数:
0
h-index:
0
HELMS, CR
.
JOURNAL OF APPLIED PHYSICS,
1986,
59
(05)
:1767
-1769
[14]
HAN CJ, 1986, SEMICONDUCTOR SILICO, P408
[15]
SI-SIO2 INTERFACE OXIDATION-KINETICS - PHYSICAL MODEL FOR THE INFLUENCE OF HIGH SUBSTRATE DOPING LEVELS .2. COMPARISON WITH EXPERIMENT AND DISCUSSION
[J].
HO, CP
论文数:
0
引用数:
0
h-index:
0
机构:
Integrated Circuits Laboratory, Stanford University, Stanford
HO, CP
;
PLUMMER, JD
论文数:
0
引用数:
0
h-index:
0
机构:
Integrated Circuits Laboratory, Stanford University, Stanford
PLUMMER, JD
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1979,
126
(09)
:1523
-1530
[16]
SI-SIO2 INTERFACE OXIDATION-KINETICS - PHYSICAL MODEL FOR THE INFLUENCE OF HIGH SUBSTRATE DOPING LEVELS .1. THEORY
[J].
HO, CP
论文数:
0
引用数:
0
h-index:
0
机构:
Integrated Circuits Laboratory, Stanford University, Stanford
HO, CP
;
PLUMMER, JD
论文数:
0
引用数:
0
h-index:
0
机构:
Integrated Circuits Laboratory, Stanford University, Stanford
PLUMMER, JD
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1979,
126
(09)
:1516
-1522
[17]
THERMAL OXIDATION OF SILICON - INSITU MEASUREMENT OF GROWTH-RATE USING ELLIPSOMETRY
[J].
HOPPER, MA
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV BRITISH COLUMBIA,DEPT ELECTR ENGN,VANCOUVER 8,BRITISH COLUMBI,CANADA
UNIV BRITISH COLUMBIA,DEPT ELECTR ENGN,VANCOUVER 8,BRITISH COLUMBI,CANADA
HOPPER, MA
;
CLARKE, RA
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV BRITISH COLUMBIA,DEPT ELECTR ENGN,VANCOUVER 8,BRITISH COLUMBI,CANADA
UNIV BRITISH COLUMBIA,DEPT ELECTR ENGN,VANCOUVER 8,BRITISH COLUMBI,CANADA
CLARKE, RA
;
YOUNG, L
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV BRITISH COLUMBIA,DEPT ELECTR ENGN,VANCOUVER 8,BRITISH COLUMBI,CANADA
UNIV BRITISH COLUMBIA,DEPT ELECTR ENGN,VANCOUVER 8,BRITISH COLUMBI,CANADA
YOUNG, L
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1975,
122
(09)
:1216
-1222
[18]
Silicon Oxidation Studies: The Role of H2O
[J].
Irene, E. A.
论文数:
0
引用数:
0
h-index:
0
机构:
IBM Thomas J Watson Res Ctr, Yorktown Hts, NY 10598 USA
IBM Thomas J Watson Res Ctr, Yorktown Hts, NY 10598 USA
Irene, E. A.
;
Ghez, R.
论文数:
0
引用数:
0
h-index:
0
机构:
IBM Thomas J Watson Res Ctr, Yorktown Hts, NY 10598 USA
IBM Thomas J Watson Res Ctr, Yorktown Hts, NY 10598 USA
Ghez, R.
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1977,
124
(11)
:1757
-1761
[19]
SILICON OXIDATION STUDIES - ANALYSIS OF SIO2 FILM GROWTH DATA
[J].
IRENE, EA
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IRENE, EA
;
VANDERMEULEN, YJ
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
VANDERMEULEN, YJ
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1976,
123
(09)
:1380
-1384
[20]
KINETICS OF ULTRATHIN SIO2 GROWTH
[J].
MURALI, V
论文数:
0
引用数:
0
h-index:
0
MURALI, V
;
MURARKA, SP
论文数:
0
引用数:
0
h-index:
0
MURARKA, SP
.
JOURNAL OF APPLIED PHYSICS,
1986,
60
(06)
:2106
-2114
←
1
2
3
→