ISOTOPIC TRACER STUDIES OF OXYGEN-TRANSPORT THROUGH SIO2-FILMS AT 1000-DEGREES-C USING SECONDARY ION MASS-SPECTROMETRY

被引:29
作者
HAN, CJ
HELMS, CR
机构
关键词
D O I
10.1063/1.337028
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:1767 / 1769
页数:3
相关论文
共 8 条
[1]   ISOTOPE LABELING STUDIES OF THE OXIDATION OF SILICON AT 1000-DEGREES-C AND 1300-DEGREES-C [J].
COSTELLO, JA ;
TRESSLER, RE .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (08) :1944-1947
[2]   GENERAL RELATIONSHIP FOR THERMAL OXIDATION OF SILICON [J].
DEAL, BE ;
GROVE, AS .
JOURNAL OF APPLIED PHYSICS, 1965, 36 (12) :3770-&
[3]  
HAN CW, UNPUB
[4]  
MIKKELSEN JC, 1984, APPL PHYS LETT, V45, P1187, DOI 10.1063/1.95086
[5]   AN O-18 STUDY OF THE OXIDATION MECHANISM OF SILICON IN DRY OXYGEN [J].
ROCHET, F ;
AGIUS, B ;
RIGO, S .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (04) :914-923
[6]   O-18 STUDY OF THE THERMAL-OXIDATION OF SILICON IN OXYGEN [J].
ROSENCHER, E ;
STRABONI, A ;
RIGO, S ;
AMSEL, G .
APPLIED PHYSICS LETTERS, 1979, 34 (04) :254-256
[7]  
ROUSE JW, 1982, COMPUT AIDED DESIGN, P261
[8]   NEW WIDE ANGLE, HIGH TRANSMISSION ENERGY ANALYZER FOR SECONDARY ION MASS-SPECTROMETRY [J].
SIEGEL, MW ;
VASILE, MJ .
REVIEW OF SCIENTIFIC INSTRUMENTS, 1981, 52 (11) :1603-1615