AN O-18 STUDY OF THE OXIDATION MECHANISM OF SILICON IN DRY OXYGEN

[1] STRUCTURAL EVOLUTION OF VERY THIN SILICON-OXIDE FILMS DURING THERMAL GROWTH IN DRY OXYGEN [J]. APPLIED PHYSICS LETTERS, 1984, 44 (01) : 48 - 50

[2] PRECISION ABSOLUTE THIN-FILM STANDARD REFERENCE TARGETS FOR NUCLEAR-REACTION MICROANALYSIS OF OXYGEN ISOTOPES .1. O-16 STANDARDS [J]. NUCLEAR INSTRUMENTS & METHODS, 1978, 149 (1-3): : 705 - 712

[3] 7ICROANALYSIS BY DIRECT OBSERVATION OF NUCLEAR REACTIONS USING A 2 MEV VAN-DE-GRAAFF [J]. NUCLEAR INSTRUMENTS & METHODS, 1971, 92 (04): : 481 - &

[4] PRECISION ABSOLUTE THIN-FILM STANDARD REFERENCE TARGETS FOR NUCLEAR-REACTION MICROANALYSIS OF OXYGEN ISOTOPES .2. O-18 AND O-17 STANDARDS [J]. NUCLEAR INSTRUMENTS & METHODS, 1978, 149 (1-3): : 713 - 720

[5] REVISED MODEL FOR OXIDATION OF SI BY OXYGEN [J]. APPLIED PHYSICS LETTERS, 1978, 33 (05) : 424 - 426

[6] BLANC J, 1978, ELECTROCHEMICAL SOC, P139

[7] THEORY OF THE OXIDATION OF METALS [J]. REPORTS ON PROGRESS IN PHYSICS, 1948, 12 : 163 - 184

[8] GENERAL RELATIONSHIP FOR THERMAL OXIDATION OF SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (12) : 3770 - &

[9] SIO2 ULTRA THIN-FILM GROWTH-KINETICS AS INVESTIGATED BY SURFACE TECHNIQUES [J]. SURFACE SCIENCE, 1982, 118 (1-2) : 32 - 46

[10] A REVISED ANALYSIS OF DRY OXIDATION OF SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (05) : 2878 - 2880

[1] STRUCTURAL EVOLUTION OF VERY THIN SILICON-OXIDE FILMS DURING THERMAL GROWTH IN DRY OXYGEN [J]. APPLIED PHYSICS LETTERS, 1984, 44 (01) : 48 - 50

[2] PRECISION ABSOLUTE THIN-FILM STANDARD REFERENCE TARGETS FOR NUCLEAR-REACTION MICROANALYSIS OF OXYGEN ISOTOPES .1. O-16 STANDARDS [J]. NUCLEAR INSTRUMENTS & METHODS, 1978, 149 (1-3): : 705 - 712

[3] 7ICROANALYSIS BY DIRECT OBSERVATION OF NUCLEAR REACTIONS USING A 2 MEV VAN-DE-GRAAFF [J]. NUCLEAR INSTRUMENTS & METHODS, 1971, 92 (04): : 481 - &

[4] PRECISION ABSOLUTE THIN-FILM STANDARD REFERENCE TARGETS FOR NUCLEAR-REACTION MICROANALYSIS OF OXYGEN ISOTOPES .2. O-18 AND O-17 STANDARDS [J]. NUCLEAR INSTRUMENTS & METHODS, 1978, 149 (1-3): : 713 - 720

[5] REVISED MODEL FOR OXIDATION OF SI BY OXYGEN [J]. APPLIED PHYSICS LETTERS, 1978, 33 (05) : 424 - 426

[6] BLANC J, 1978, ELECTROCHEMICAL SOC, P139

[7] THEORY OF THE OXIDATION OF METALS [J]. REPORTS ON PROGRESS IN PHYSICS, 1948, 12 : 163 - 184

[8] GENERAL RELATIONSHIP FOR THERMAL OXIDATION OF SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (12) : 3770 - &

[9] SIO2 ULTRA THIN-FILM GROWTH-KINETICS AS INVESTIGATED BY SURFACE TECHNIQUES [J]. SURFACE SCIENCE, 1982, 118 (1-2) : 32 - 46

[10] A REVISED ANALYSIS OF DRY OXIDATION OF SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (05) : 2878 - 2880