KINETICS OF ULTRATHIN SIO2 GROWTH

被引：30

作者：

MURALI, V

MURARKA, SP

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1986年 / 60卷 / 06期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.337216

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：2106 / 2114

页数：9

相关论文

共 24 条

[1] THE GROWTH AND CHARACTERIZATION OF VERY THIN SILICON DIOXIDE FILMS [J].

ADAMS, AC ;

SMITH, TE ;

CHANG, CC .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (08) :1787-1794

[2] SI-SIO2 INTERFACE EXAMINED BY CROSS-SECTIONAL TRANSMISSION ELECTRON-MICROSCOPY [J].

BLANC, J ;

BUIOCCHI, CJ ;

ABRAHAMS, MS ;

HAM, WE .

APPLIED PHYSICS LETTERS, 1977, 30 (02) :120-122

[3] REVISED MODEL FOR OXIDATION OF SI BY OXYGEN [J].

BLANC, J .

APPLIED PHYSICS LETTERS, 1978, 33 (05) :424-426

[4] ESCA STUDY OF OXIDE AT SI-SIO2 INTERFACE [J].

CLARKE, RA ;

TAPPING, RL ;

HOPPER, MA ;

YOUNG, L .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (10) :1347-1350

[5] GENERAL RELATIONSHIP FOR THERMAL OXIDATION OF SILICON [J].

DEAL, BE ;

GROVE, AS .

JOURNAL OF APPLIED PHYSICS, 1965, 36 (12) :3770-&

[6] CHARACTERISTICS OF SURFACE-STATE CHARGE (QSS) OF THERMALLY OXIDIZED SILICON [J].

DEAL, BE ;

SKLAR, M ;

GROVE, AS ;

SNOW, EH .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (03) :266-+

[7] FORMATION OF ULTRATHIN OXIDE-FILMS ON SILICON [J].

FEHLNER, FP .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (12) :1723-+

[8]

FELDMAN LC, 1978, PHYSICS SIO2 ITS INT

[9] ELECTRON MEAN ESCAPE DEPTHS FROM X-RAY PHOTOELECTRON-SPECTRA OF THERMALLY OXIDIZED SILICON DIOXIDE FILMS ON SILICON [J].

FLITSCH, R ;

RAIDER, SI .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1975, 12 (01) :305-308

[10] THIN TUNNELABLE LAYERS OF SILICON DIOXIDE FORMED BY OXIDATION OF SILICON [J].

GOODMAN, AM ;

BREECE, JM .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (07) :982-&