Time dependent dielectric breakdown of paraelectric barium-strontium-titanate thin film capacitors for memory device applications

被引：25

作者：

Huang, SC ^{[1
]}

Chen, HM ^{[1
]}

Wu, SC ^{[1
]}

Lee, JYM ^{[1
]}

机构：

[1] Tsing Hua Univ, Dept Elect Engn, Hsinchu, Taiwan

来源：

JOURNAL OF APPLIED PHYSICS | 1998年 / 84卷 / 09期

关键词：

D O I：

10.1063/1.368765

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Barium-strontium-titanate (BST) is an important material for dynamic random access memory capacitor applications. In this work, BST thin films are prepared by the sol-gel method and metal-BST-metal capacitors are fabricated. The time dependent dielectric breakdown (TDDB) of the BST capacitors is measured and analyzed. A new extrapolation method is developed to obtain the TDDB lifetime from the time to breakdown (t(BD)) data. The leakage current is found to depend on the applied electric field in a power law relationship. The exponent in the power law relation is close to 1 in the low field region (lower than 16 MV/m) and is about 16.5 in the high field region (larger than 16 MV/m). A correlation between the leakage current and the TDDB lifetime is established. The extrapolated lifetime is about 10(12) s at 3.3 V for 330-nm-thick films. (C) 1998 American Institute of Physics. [S0021-8979(98)08820-3].

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页码：5155 / 5157

页数：3

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