OMVPE growth and gas-phase reactions of AlGaN for UV emitters

被引:67
作者
Han, J
Figiel, JJ
Crawford, MH
Banas, MA
Bartram, ME
Biefeld, RM
Song, YK
Nurmikko, AV
机构
[1] Sandia Natl Labs, Albuquerque, NM 87185 USA
[2] Brown Univ, Div Engn, Providence, RI 02912 USA
关键词
gas-phase reactions; LED; GaN; quantum well; diode;
D O I
10.1016/S0022-0248(98)00675-7
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
Gas-phase parasitic reactions among TMG, TMA, and NH3, are investigated by monitoring the growth rate/incorporation efficiency of GaN and AlN using an in situ optical reflectometer. It is suggested that gas phase adduct (TMA: NH3) reactions not only reduce the incorporation efficiency of TMA but also affect the incorporation behavior of TMGa. The observed phenomena can be explained by either a synergistic gas-phase scavenging effect or a surface site-blocking effect. Relatively low reactor pressures (30-50 Torr) are employed to grow an AlGaN/GaN QW p-n diode structure. The UV emission at 354 nm (FWHM similar to 6 nm) represents the first report of LED operation from an indium-free GaN QW diode. (C) 1998 Published by Elsevier Science B.V. All rights reserved.
引用
收藏
页码:291 / 296
页数:6
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