Computational 2D Materials Database: Electronic Structure of Transition-Metal Dichalcogenides and Oxides

被引:917
作者
Rasmussen, Filip A.
Thygesen, Kristian S. [1 ]
机构
[1] Techn Univ Denmark, CAMD, Dept Phys, DK-2800 Lyngby, Denmark
基金
新加坡国家研究基金会;
关键词
SINGLE-LAYER MOS2; VALLEY POLARIZATION; ATOMIC LAYERS; LARGE-AREA; MONOLAYER; STATES; NANOSHEETS; DIODES; GAP;
D O I
10.1021/acs.jpcc.5b02950
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
We present a comprehensive first-principles study of the electronic structure of 51 semiconducting monolayer transition-metal dichalcogenides and -oxides in the 2H and 1T hexagonal phases. The quasiparticle (QP) band structures with spin-orbit coupling are calculated in the G(0)W(0) approximation, and comparison is made with different density functional theory descriptions. Pitfalls related to the convergence of GW calculations for two-dimensional (2D) materials are discussed together with possible solutions. The monolayer band edge positions relative to vacuum are used to estimate the band alignment at various heterostructure interfaces. The sensitivity of the band structures to the in-plane lattice constant is analyzed and rationalized in terms of the electronic structure. Finally, the q-dependent dielectric functions and effective electron and hole masses are obtained from the QP band structure and used as input to a 2D hydrogenic model to estimate exciton binding energies. Throughout the paper we focus on trends and correlations in the electronic structure rather than detailed analysis of specific materials. All the computed data is available in an open database.
引用
收藏
页码:13169 / 13183
页数:15
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