Electrotransport properties of p-ZnSnAs2 thin films grown by molecular beam epitaxy on semi-insulating (001) InP substrates

ZnSnAs2 thin films were prepared by molecular beam epitaxy (MBE) on semi-insulating (001) InP substrates using the same growth conditions as previously reported. High-resolution X-ray diffractometry (HRXRD) and Raman spectroscopy studies suggest the presence of both the chalcopyrite and sphalerite phases. The transport properties were measured from 5 K up to room temperature. We observed a pronounced peak in the Hall coefficient temperature dependence curve at similar to 130 K, similar to those observed only from chalcopyrite-phase bulk ZnSnAs2 in earlier studies. A hole concentration of p = 5.98 x 10(18) cm(-3), hole mobility of mu = 23.61 cm(2)/(V.s) and resistivity of rho = 4.43 x 10(-2) Omega.cm were obtained at room temperature.