MBE growth of Mn-doped Zn-Sn-As compounds on (001) InP substrates

被引：23

作者：

Asubar, J. T.

Kato, A.

Kambayashi, T.

Nakamura, S.

Jinbo, Y.

Uchitomi, N.

机构：

[1] Nagaoka Univ Technol, Dept Elect Engn, Nagaoka, Niigata 9402188, Japan

[2] Aoyama Gakuin Univ, Ctr Instrumental Anal, Sagamihara, Kanagawa 2298558, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2007年 / 301卷

关键词：

crystal structure; reflection high-energy electron diffraction; X-ray diffraction; molecular beam epitaxy; magnetic semiconductors;

D O I：

10.1016/j.jcrysgro.2006.12.015

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We report the molecular beam epitaxy (MBE) growth of lightly Mn-doped Zn-Sn-As-based compounds on (0 0 1) InP substrates. Our XRD measurements showed peaks assignable to sphalerite-type ZnSnAs2:Mn, a supposition further supported by our EPMA and TEM analyses. The optimum substrate temperature T-S resulting into the most stoichiometric ZnSnAs2 epitaxial films was first determined by growing undoped ZnSnAs2 at different T-S of 265, 280, 300, and 320 degrees C. The sample grown at T-S = 300 degrees C showed the best stoichiometry according to our EPMA composition studies. We then prepared lightly Mn-doped ZnSnAs2 at this optimum substrate temperature of 300 degrees C. Room temperature SQUID measurements revealed paramagnetic response with weak ferromagnetism as evident from the slightly S-shape M-H curve superimposed on a linearly increasing magnetization with increasing field. (c) 2007 Elsevier B.V. All rights reserved.

引用

页码：656 / 661

页数：6

共 15 条

[1] MBE growth and properties of GaMnAs with high level of Zn acceptor incorporation [J].

Asubar, J. T. ;

Sato, S. ;

Jinbo, Y. ;

Uchitomi, N. .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2006, 203 (11) :2778-2782

[2] Electronic and magnetic properties of MnSnAS2 [J].

Cho, SG ;

Choi, SY ;

Cha, GB ;

Hong, SC ;

Park, Y ;

Park, HM ;

Kim, Y ;

Ketterson, JB .

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 2004, 241 (07) :1462-1465

[3] Room-temperature ferromagnetism in (Zn1-xMnx)GeP2 semiconductors -: art. no. 257203 [J].

Cho, SL ;

Choi, SY ;

Cha, GB ;

Hong, SC ;

Kim, Y ;

Zhao, YJ ;

Freeman, AJ ;

Ketterson, JB ;

Kim, BJ ;

Kim, YC ;

Choi, BC .

PHYSICAL REVIEW LETTERS, 2002, 88 (25) :4-257203

[4] Room-temperature ferromagnetism in chalcopyrite Mn-doped ZnSnAS2 single crystals [J].

Choi, S ;

Cha, GB ;

Hong, SC ;

Cho, S ;

Kim, Y ;

Ketterson, JB ;

Jeong, SY ;

Yi, GC .

SOLID STATE COMMUNICATIONS, 2002, 122 (3-4) :165-167

[5] Hole-mediated ferromagnetism in tetrahedrally coordinated semiconductors [J].

Dietl, T ;

Ohno, H ;

Matsukura, F .

PHYSICAL REVIEW B, 2001, 63 (19)

[6] Zn preadsorption on GaAs(100)2x4 prior to ZnSe growth [J].

Heun, S ;

Paggel, JJ ;

Rubini, S ;

Franciosi, A .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1996, 14 (04) :2980-2984

[7] Effect of Be doping on the properties of GaMnAs ferromagnetic semiconductors [J].

Lee, S ;

Chung, SJ ;

Choi, IS ;

Yuldeshev, SU ;

Im, H ;

Kang, TW ;

Lim, WL ;

Sasaki, Y ;

Liu, X ;

Wojtowicz, T ;

Furdyna, JK .

JOURNAL OF APPLIED PHYSICS, 2003, 93 (10) :8307-8309

[8] Room temperature ferromagnetism in novel diluted magnetic semiconductor Cd1-xMnxGeP2 [J].

Medvedkin, GA ;

Ishibashi, T ;

Nishi, T ;

Hayata, K ;

Hasegawa, Y ;

Sato, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 2000, 39 (10A) :L949-L951

[9] (Ga,Mn)As: A new diluted magnetic semiconductor based on GaAs [J].

Ohno, H ;

Shen, A ;

Matsukura, F ;

Oiwa, A ;

Endo, A ;

Katsumoto, S ;

Iye, Y .

APPLIED PHYSICS LETTERS, 1996, 69 (03) :363-365

[10] KRISTALLSTRUKTUR VON ZNSNAS2 [J].

PFISTER, H .

ACTA CRYSTALLOGRAPHICA, 1963, 16 (02) :153-&

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