Surface state dispersion on the β-SiC(111)-(3x3) surface

被引：15

作者：

Husken, H ^{[1
]}

Schroter, B ^{[1
]}

Richter, W ^{[1
]}

机构：

[1] Univ Jena, Inst Festkorperforsch, D-07743 Jena, Germany

来源：

SURFACE SCIENCE | 1998年 / 407卷 / 1-3期

关键词：

angle-resolved photoemission; low index single crystal surface; silicon carbide; surface electronic phenomena; visible and ultraviolet photoemission;

D O I：

10.1016/S0039-6028(98)00276-3

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The electronic structure of the Si-terminated beta-SiC(111)-(3 x 3) surface has been studied using angle-resolved ultraviolet photoemission spectroscopy. A semiconducting surface occupation with no emission from states at the Fermi level is observed. Two surface state bands are identified in the fundamental gap, centered at 0.65 eV and 1.4 eV binding energy, respectively, 1.35 eV and 0.6 eV above the valence band maximum. Their dispersion is measured along the high symmetry lines of the surface Brillouin zone. (C) 1998 Elsevier Science B.V. All rights reserved.

引用

页码：L676 / L680

页数：5

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