Ultrafast upconversion probing of lasing dynamics in single ZnO nanowire lasers

被引：55

作者：

Song, Jae Kyu ^{[4
]}

Willer, Ulrike ^{[1
,2
,3
]}

Szarko, Jodi M. ^{[1
,2
,3
]}

Leone, Stephen R. ^{[1
,2
,3
]}

Li, Shihong ^{[5
]}

Zhao, Yiping ^{[5
]}

机构：

[1] Univ Calif Berkeley, Dept Chem, Berkeley, CA 94720 USA

[2] Univ Calif Berkeley, Dept Phys, Berkeley, CA 94720 USA

[3] Univ Calif Berkeley, Lawrence Berkeley Natl Lab, Berkeley, CA 94720 USA

[4] Kyung Hee Univ, Dept Chem, Seoul 130701, South Korea

[5] Univ Georgia, Dept Phys & Astron, Athens, GA 30602 USA

来源：

JOURNAL OF PHYSICAL CHEMISTRY C | 2008年 / 112卷 / 05期

关键词：

D O I：

10.1021/jp0757513

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The ultrafast lasing dynamics of single zinc oxide nanowires are studied by time-resolved upconversion of the lasing emission as a function of the ultraviolet excitation intensity. Induction times for stimulated emission in individual nanowires are observed to be 1-5 ps or 3-15 roundtrips for nominal 20 mu m long nanowires, depending on the 267 nm excitation intensity. In separate experiments, transient absorption profiles are also obtained for time-delayed 800 and 400 nm pulses to elucidate the carrier dynamics, such as rapid decay (2-3 ps) of the electron-hole plasma (EHP) states at high carrier densities during lasing in the nanowire and the slower exciton decay component (15-60 ps) at lower excitation densities. The dynamics of the lasing wavelength dependence on carrier density is also studied and related to the band gap renormalization in the EHP regime.

引用

页码：1679 / 1684

页数：6

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