Bond modification of BCN films on Ni substrate

被引:36
作者
Yap, YK [1 ]
Wada, Y [1 ]
Yamaoka, M [1 ]
Yoshimura, M [1 ]
Mori, Y [1 ]
Sasaki, T [1 ]
机构
[1] Osaka Univ, Dept Elect Engn, Suita, Osaka 5650871, Japan
关键词
nitride; BCN; nickel; nanostructures;
D O I
10.1016/S0925-9635(00)00373-3
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We show that the composition for boron-carbon-nitrogen (BCN) ternary films can be tailored by controlling the quantities of the carbon and BN plumes together with the use of in situ nitrogen ion bombardment. At 800 degreesC, BCN films with composition of BC2N are obtained on Si (100) substrates. However, Fourier transformed infrared (FTIR) and X-ray photoelectron spectroscopy (XPS) measurements indicate that these films are carbon doped BN compounds (BN:C), in which, phase separation of the carbon and BN phases occurred. On the other hand, hybridized BCN films can be deposited on Ni substrates under similar synthesis conditions. In such a case, the carbon and BN phases are hybridized through the carbon nitride and boron carbide bonds. These films appeared in fibrous nanostructures as observed by field emission scanning electron microscopy (FESEM). Evidence indicates that the Ni substrate acts as a sink for the carbon and forces the carbon composites to grow on top of the B and N atoms. By this means, bond hybridization between the carbon and BN phases occurred. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:1137 / 1141
页数:5
相关论文
共 17 条
[1]   LOSS OF EPITAXY DURING DIAMOND FILM GROWTH ON ORDERED NI(100) [J].
BELTON, DN ;
SCHMIEG, SJ .
JOURNAL OF APPLIED PHYSICS, 1989, 66 (09) :4223-4229
[2]  
Berns DH, 1996, APPL PHYS LETT, V68, P2711, DOI 10.1063/1.115573
[3]   B/C/N materials based on the graphite network [J].
Kawaguchi, M .
ADVANCED MATERIALS, 1997, 9 (08) :615-625
[4]   HIGH-PRESSURE SYNTHESIS, CHARACTERIZATION, AND EQUATION OF STATE OF CUBIC C-BN SOLID-SOLUTIONS [J].
KNITTLE, E ;
KANER, RB ;
JEANLOZ, R ;
COHEN, ML .
PHYSICAL REVIEW B, 1995, 51 (18) :12149-12156
[5]  
LAMBRECHT WRL, 1993, PHYS REV B, V47, P4298
[6]   ATOMIC ARRANGEMENT AND ELECTRONIC-STRUCTURE OF BC2N [J].
LIU, AY ;
WENTZCOVITCH, RM ;
COHEN, ML .
PHYSICAL REVIEW B, 1989, 39 (03) :1760-1765
[7]   CARBON NITRIDE DEPOSITED USING ENERGETIC SPECIES - A 2-PHASE SYSTEM [J].
MARTON, D ;
BOYD, KJ ;
ALBAYATI, AH ;
TODOROV, SS ;
RABALAIS, JW .
PHYSICAL REVIEW LETTERS, 1994, 73 (01) :118-121
[8]   PROPERTIES AND CHARACTERIZATION OF CODEPOSITED BORON-NITRIDE AND CARBON MATERIALS [J].
MOORE, AW ;
STRONG, SL ;
DOLL, GL ;
DRESSELHAUS, MS ;
SPAIN, IL ;
BOWERS, CW ;
ISSI, JP ;
PIRAUX, L .
JOURNAL OF APPLIED PHYSICS, 1989, 65 (12) :5109-5118
[9]   FURTHER STUDIES ON DIAMOND GROWTH RATES AND PHYSICAL PROPERTIES OF LABORATORY-MADE DIAMOND [J].
STRONG, HM ;
CHRENKO, RM .
JOURNAL OF PHYSICAL CHEMISTRY, 1971, 75 (12) :1838-&
[10]   Phase separation in magnetron sputtered superhard BCN thin films [J].
Ulrich, S ;
Ehrhardt, H ;
Theel, T ;
Schwan, J ;
Westermeyr, S ;
Scheib, M ;
Becker, P ;
Oechsner, H ;
Dollinger, G ;
Bergmaier, A .
DIAMOND AND RELATED MATERIALS, 1998, 7 (06) :839-844