Microstructures of gallium nitride nanowires synthesized by oxide-assisted method

被引：93

作者：

Shi, WS ^{[1
]}

Zheng, YF ^{[1
]}

Wang, N ^{[1
]}

Lee, CS ^{[1
]}

Lee, ST ^{[1
]}

机构：

[1] City Univ Hong Kong, Ctr Super Diamond & Adv Film, Dept Phys & Mat Sci, COSDAF, Kowloon, Hong Kong, Peoples R China

来源：

CHEMICAL PHYSICS LETTERS | 2001年 / 345卷 / 5-6期

关键词：

D O I：

10.1016/S0009-2614(01)00882-X

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Gallium nitride (GaN) nanowires were synthesized using the recently developed oxide-assisted method by laser ablating a target of GaN mixed with gallium oxide (Ga2O3). Transmission electron microscopic characterization showed that GaN nanowires were smooth and straight with a core-sheath structure of 80 nm in average diameter and tens of micrometers in length. Both hexagonal and cubic structured GaN nanowires were produced. The growth mechanism was discussed. (C) 2001 Published by Elsevier Science B.V.

引用

页码：377 / 380

页数：4

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