Enhanced Semiconductor Nanocrystal Conductance via Solution Grown Contacts

被引:112
作者
Sheldon, Matthew T.
Trudeau, Paul-Emile
Mokari, Taleb [1 ]
Wang, Lin-Wang [2 ]
Alivisatos, A. Paul [1 ]
机构
[1] Univ Calif Berkeley, Lawrence Berkeley Lab, Div Mat Sci, Berkeley, CA 94720 USA
[2] Univ Calif Berkeley, Lawrence Berkeley Lab, Computat Res Div, Berkeley, CA 94720 USA
关键词
D O I
10.1021/nl902186v
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
We report a 100000-fold increase in the conductance of individual CdSe nanorods when they are electrically contacted via direct solution phase growth of Au tips on the nanorod ends. Ensemble UV-vis and X-ray photoelectron spectroscopies Indicate this enhancement does not result from alloying of the nanorod. Rather, low temperature tunneling and high temperature (250-400 K) thermionic emission across the junction at the Au contact reveal a 75% lower interface barrier to conduction compared to a control sample. We correlate this barrier lowering with the electronic structure at the Au-CdSe interface. Our results emphasize the Importance of a nanocrystal surface structure for robust device performance and the advantage of this contact method.
引用
收藏
页码:3676 / 3682
页数:7
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