Interface bonding, chemical reactions, and defect formation at metal-semiconductor interfaces

被引：22

作者：

Brillson, L. J. ^{[1
]}

机构：

[1] Ohio State Univ, Dreese Lab 205, Columbus, OH 43210 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 2007年 / 25卷 / 04期

基金：

美国国家航空航天局; 美国国家科学基金会;

关键词：

D O I：

10.1116/1.2432348

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The 2006 Gaede-Langmuir Award recognizes work that revealed the importance of chemical bonding, reactions, and diffusion on the electrical properties of metal-semiconductor interfaces. In addition to the surface science research that first identified correlations between interface chemical and electronic properties, this article includes results using nanoscale depth-resolved techniques that extend this work in new directions. These studies provide representative examples of chemically induced electronic defects near interfaces that play a role at metal-semiconductor junctions. Chemical correlations with local electronic states suggest new ways to predict and control Schottky barriers in the nanoscale regime. (c) 2007 American Vacuum Society.

引用

页码：943 / 949

页数：7

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