Effect of concentration of complexing agent (tartaric acid) on the properties of spray deposited Sb2S3 thin films

被引：40

作者：

Gadakh, SR ^{[1
]}

Bhosale, CH ^{[1
]}

机构：

[1] Shivaji Univ, Dept Phys, Electrochem Mat Lab, Kolhapur 416004, Maharashtra, India

来源：

MATERIALS CHEMISTRY AND PHYSICS | 2003年 / 78卷 / 02期

关键词：

thin films; Sb2S3; complexing agent (tartaric acid);

D O I：

10.1016/S0254-0584(02)00101-3

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Antimony trisulphide thin films have been prepared by a spray pyrolysis technique using various concentrations of complexing agent (tartaric acid) in the spray solution. These films are characterized for structural, electrical and optical properties. The results of XRD studies reveal that the films are polycrystalline. The crystallinity and direction of growth is found to be a function of the concentration of complexing agent. It is found that resistivity varies with the concentration of complexing agent. The resistivity of the films is 10(6)-10(7) Omega cm(-1). The band gap energy also varies with the concentration of the complexing agent from 1.92 to 2.13 eV. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：367 / 371

页数：5

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