Controlling Nucleation and Crystallization in Solution-Processed Organic Semiconductors for Thin-Film Transistors

被引：136

作者：

Lee, Stephanie S. ^{[1
]}

Kim, Chang Su ^{[1
]}

Gomez, Enrique D. ^{[1
]}

Purushothaman, Balaji ^{[4
]}

Toney, Michael F. ^{[2
]}

Wang, Cheng ^{[3
]}

Hexemer, Alexander ^{[3
]}

Anthony, John. E. ^{[4
]}

Loo, Yueh-Lin ^{[1
]}

机构：

[1] Princeton Univ, Dept Chem Engn, Princeton, NJ 08544 USA

[2] Stanford Synchrotron Radiat Lightsource, Menlo Pk, CA 94025 USA

[3] Univ Calif Berkeley, Lawrence Berkeley Lab, Berkeley, CA 94720 USA

[4] Univ Kentucky, Dept Chem, Lexington, KY 40506 USA

来源：

ADVANCED MATERIALS | 2009年 / 21卷 / 35期

基金：

美国国家科学基金会;

关键词：

FIELD-EFFECT TRANSISTORS; TRIETHYLSILYLETHYNYL ANTHRADITHIOPHENE; SOLUBLE ANTHRADITHIOPHENE; CHARGE-TRANSPORT; GRAIN-REFINEMENT; PENTACENE; MORPHOLOGY; MOBILITY; PERFORMANCE; ELECTRONICS;

D O I：

10.1002/adma.200900705

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Three orders of magnitude is the range over which the grain size (see figure) can be tuned in solution-processed organic semiconductor thin films for TFTs. Fluorinated triethylsilyl anthradithiophene (FTES-ADT) is added in fractional amounts to seed crystallization of TES-ADT Correlation between device mobility and grain size in the active layer is described by a composite mobility model that assumes charge-carrier traps are located at grain boundaries.

引用

页码：3605 / +

页数：6

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