First demonstration of InA1As/InGaAs HEMTs using T-gates fabricated by a bilayer of UVIII and PMMA resists

被引：6

作者：

Chen, Y ^{[1
]}

Lodhi, T ^{[1
]}

McLelland, H ^{[1
]}

Edgar, DL ^{[1
]}

Macintyre, D ^{[1
]}

Thoms, S ^{[1
]}

Stanley, CR ^{[1
]}

Thayne, IG ^{[1
]}

机构：

[1] Univ Glasgow, Dept Elect & Elect Engn, Nanoelectr Res Ctr, Glasgow G12 8QQ, Lanark, Scotland

来源：

8TH IEEE INTERNATIONAL SYMPOSIUM ON HIGH PERFORMANCE ELECTRON DEVICES FOR MICROWAVE AND OPTOELECTRONIC APPLICATIONS | 2000年

关键词：

D O I：

10.1109/EDMO.2000.919059

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report the first lattice matched InP HEMTs fabricated using a T-gate process based on a bilayer of Shipley UVIII DT-TV resist and PMMA. A DC gate resistance of 220 Omega /mm was achieved, leading to f(T) of 193 GHz and Maximum Available Gain (MAG) values of 13 dB at 94 GHz for 100 mum wide devices.

引用

页码：202 / 205

页数：4

共 6 条

[1] 0.2 MICRON LENGTH T-SHAPED GATE FABRICATION USING ANGLE EVAPORATION [J].

CHAO, PC ;

KU, WH ;

SMITH, PM ;

PERKINS, WH .

IEEE ELECTRON DEVICE LETTERS, 1983, 4 (04) :122-124

[2] Electron beam lithography process for T- and Γ-shaped gate fabrication using chemically amplified DUV resists and PMMA [J].

Chen, Y ;

Macintyre, D ;

Thoms, S .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1999, 17 (06) :2507-2511

[3] Fabrication of T-shaped gates using UVIII chemically amplified DUV resist and PMMA [J].

Chen, Y ;

Macintyre, D ;

Thoms, S .

ELECTRONICS LETTERS, 1999, 35 (04) :338-339

[4]

Duh K. H. G., 1991, IEEE Microwave and Guided Wave Letters, V1, P114, DOI 10.1109/75.89081

[5]

MATSUMURA M, 1981, ELECTRON LETT, V12, P429

[6]

WU L, 1997, P DTG EL TECHN SEM 9, P102

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