Fabrication of T-shaped gates using UVIII chemically amplified DUV resist and PMMA

被引：14

作者：

Chen, Y ^{[1
]}

Macintyre, D ^{[1
]}

Thoms, S ^{[1
]}

机构：

[1] Univ Glasgow, Dept Elect & Elect Engn, Nanoelectr Res Ctr, Glasgow G12 8QQ, Lanark, Scotland

来源：

ELECTRONICS LETTERS | 1999年 / 35卷 / 04期

关键词：

D O I：

10.1049/el:19990196

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A novel process has been developed for the fabrication of sub-100nm T-shaped gates for high performance MESFETs and HEMTs using a bilayer of Shipley UVIII DUV resist and polymethylmethacrylate (PMMA). The process is reliable and gives well defined metallised gates. Ratios of gale cross-section to gate length in excess of 20:1 have been achieved.

引用

页码：338 / 339

页数：2

共 6 条

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