PHOTO/EB HYBRID EXPOSURE PROCESS FOR T-SHAPED GATE SUPERLOW-NOISE HEMTS

被引：21

作者：

HOSOGI, K ^{[1
]}

NAKANO, N ^{[1
]}

MINAMI, H ^{[1
]}

KATOH, T ^{[1
]}

NISHITANI, K ^{[1
]}

OTSUBO, M ^{[1
]}

KATSUMATA, M ^{[1
]}

NAGAHAMA, K ^{[1
]}

机构：

[1] MITSUBISHI ELECTR CO,LSI LAB,ITAMI,HYOGO 664,JAPAN

来源：

ELECTRONICS LETTERS | 1991年 / 27卷 / 22期

关键词：

TRANSISTORS; SEMICONDUCTOR DEVICES AND MATERIALS; SEMICONDUCTOR GROWTH;

D O I：

10.1049/el:19911245

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A process for fabricating T-shaped gates using photo/EB hybrid exposure has been developed. This process is suitable for mass production of high performance HEMTs. A 0.2-mu-m T-shaped gate HEMT exhibits very low noise figures of 0.40 and 1.1 dB at 12 and 40 GHz, respectively, and high reliability.

引用

页码：2011 / 2012

页数：2

共 9 条

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