0.2 MICRON LENGTH T-SHAPED GATE FABRICATION USING ANGLE EVAPORATION

[1] BANDY S, 1981, ONR3 VAR ASS INC ANN

[2] Chao P. C., 1981, International Electron Devices Meeting, P92

[3] STABILITY OF PERFORMANCE AND INTERFACIAL PROBLEMS IN GAAS-MESFETS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (06) : 1037 - 1045

[4] EXTREMELY LOW-NOISE MESFETS FABRICATED BY METAL-ORGANIC CHEMICAL VAPOR-DEPOSITION [J]. ELECTRONICS LETTERS, 1981, 17 (13) : 450 - 451

[5] LADD GO, 1980, DELETTR7726962 HUGH

[6] SUBMICROMETER LIFT-OFF LINE WITH T-SHAPED CROSS-SECTIONAL FORM [J]. ELECTRONICS LETTERS, 1981, 17 (12) : 429 - 430

[7] TUNGSTEN-GOLD GATE GAAS MICROWAVE FET [J]. ELECTRONICS LETTERS, 1978, 14 (16) : 514 - 515

[8] SUPER LOW-NOISE GAAS-MESFETS WITH A DEEP-RECESS STRUCTURE [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (06) : 1029 - 1034

[9] OMORI M, 1980, Patent No. 4213840

[10] SUBMICROMETER GATE FABRICATION OF GAAS MESFET BY PLASMA ETCHING [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (10) : 1213 - 1218

[1] BANDY S, 1981, ONR3 VAR ASS INC ANN

[2] Chao P. C., 1981, International Electron Devices Meeting, P92

[3] STABILITY OF PERFORMANCE AND INTERFACIAL PROBLEMS IN GAAS-MESFETS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (06) : 1037 - 1045

[4] EXTREMELY LOW-NOISE MESFETS FABRICATED BY METAL-ORGANIC CHEMICAL VAPOR-DEPOSITION [J]. ELECTRONICS LETTERS, 1981, 17 (13) : 450 - 451

[5] LADD GO, 1980, DELETTR7726962 HUGH

[6] SUBMICROMETER LIFT-OFF LINE WITH T-SHAPED CROSS-SECTIONAL FORM [J]. ELECTRONICS LETTERS, 1981, 17 (12) : 429 - 430

[7] TUNGSTEN-GOLD GATE GAAS MICROWAVE FET [J]. ELECTRONICS LETTERS, 1978, 14 (16) : 514 - 515

[8] SUPER LOW-NOISE GAAS-MESFETS WITH A DEEP-RECESS STRUCTURE [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (06) : 1029 - 1034

[9] OMORI M, 1980, Patent No. 4213840

[10] SUBMICROMETER GATE FABRICATION OF GAAS MESFET BY PLASMA ETCHING [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (10) : 1213 - 1218