Thin film growth of silicon carbide from methyl-trichloro-silane by RF plasma-enhanced CVD

Silicon carbide was grown using an RF plasma CVD with methyl-trichloro-silane as the source material. Experiments were carried out using hydrogen as the carrier gas at about 1 Torr and at low substrate temperatures (150-350 degrees C). The source material was saturated into the carrier gas at atmospheric pressure, and this gas was introduced into the CVD chamber through a check valve. The substrates were Sill 0 0) wafers, and the power density of the RF plasma ranged between 250 and 750 mW/cm(2). All of the thin films obtained were amorphous. The silicon and chlorine contents of the films decreased with increasing plasma power density, and the growth rate increased with increasing power. It is concluded from this result that electron collisions at high power density increases the decomposition of SiCl3 fragments at a rate greater than that of the CH3 fragments.