Atomic-Layer Graphene as a Saturable Absorber for Ultrafast Pulsed Lasers

被引:2693
作者
Bao, Qiaoliang [1 ]
Zhang, Han [2 ]
Wang, Yu [1 ]
Ni, Zhenhua [3 ]
Yan, Yongli [1 ]
Shen, Ze Xiang [3 ]
Loh, Kian Ping [1 ]
Tang, Ding Yuan [2 ]
机构
[1] Natl Univ Singapore, Dept Chem, Singapore 117543, Singapore
[2] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore
[3] Nanyang Technol Univ, Sch Phys & Math Sci, Singapore 639798, Singapore
关键词
DYNAMICS;
D O I
10.1002/adfm.200901007
中图分类号
O6 [化学];
学科分类号
070301 [无机化学];
摘要
The optical conductance of monolayer graphene is defined solely by the fine structure constant, alpha = e(2)/(h) over bar hc (where e is the electron charge, (h) over bar is Dirac's constant and c is the speed of light). The absorbance has been predicted to be independent of frequency. In principle, the interband optical absorbtion in zero-gap graphene could be saturated readily under strong excitation due to Pauli blocking. Here, use of atomic layer graphene as saturable absorber in a mode-locked fiber laser for the generation of ultrashort soliton pulses (756 fs) at the telecommunication band is demonstrated. The modulation depth can be tuned in a wide range from 66.5% to 6.2% by varying the graphene thickness. These results suggest that ultrathin graphene films are potentially useful as optical elements in fiber lasers. Graphene as a laser mode locker can have many merits such as lower saturation intensity, ultrafast recovery time, tunable modulation depth, and wideband tunability.
引用
收藏
页码:3077 / 3083
页数:7
相关论文
共 31 条
[1]
Dynamical conductivity and zero-mode anomaly in honeycomb lattices [J].
Ando, T ;
Zheng, YS ;
Suzuura, H .
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 2002, 71 (05) :1318-1324
[2]
Phonons behaving badly [J].
Castro Neto, Antonio H. .
NATURE MATERIALS, 2007, 6 (03) :176-177
[3]
Measurement of ultrafast carrier dynamics in epitaxial graphene [J].
Dawlaty, Jahan M. ;
Shivaraman, Shriram ;
Chandrashekhar, Mvs ;
Rana, Farhan ;
Spencer, Michael G. .
APPLIED PHYSICS LETTERS, 2008, 92 (04)
[4]
Graphene bilayer with a twist: Electronic structure [J].
dos Santos, J. M. B. Lopes ;
Peres, N. M. R. ;
Castro Neto, A. H. .
PHYSICAL REVIEW LETTERS, 2007, 99 (25)
[5]
Raman spectrum of graphene and graphene layers [J].
Ferrari, A. C. ;
Meyer, J. C. ;
Scardaci, V. ;
Casiraghi, C. ;
Lazzeri, M. ;
Mauri, F. ;
Piscanec, S. ;
Jiang, D. ;
Novoselov, K. S. ;
Roth, S. ;
Geim, A. K. .
PHYSICAL REVIEW LETTERS, 2006, 97 (18)
[6]
Garmine E., 1999, Nonlinear Optics in Semiconductor, V59
[7]
Resonant optical nonlinearities in semiconductors [J].
Garmire, E .
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2000, 6 (06) :1094-1110
[8]
Ultrafast Optical-Pump Terahertz-Probe Spectroscopy of the Carrier Relaxation and Recombination Dynamics in Epitaxial Graphene [J].
George, Paul A. ;
Strait, Jared ;
Dawlaty, Jahan ;
Shivaraman, Shriram ;
Chandrashekhar, Mvs ;
Rana, Farhan ;
Spencer, Michael G. .
NANO LETTERS, 2008, 8 (12) :4248-4251
[9]
Electronic states and Landau levels in graphene stacks [J].
Guinea, F. ;
Castro Neto, A. H. ;
Peres, N. M. R. .
PHYSICAL REVIEW B, 2006, 73 (24)
[10]
Semiconductor saturable absorber mirrors (SESAM's) for femtosecond to nanosecond pulse generation in solid-state lasers [J].
Keller, U ;
Weingarten, KJ ;
Kartner, FX ;
Kopf, D ;
Braun, B ;
Jung, ID ;
Fluck, R ;
Honninger, C ;
Matuschek, N ;
derAu, JA .
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 1996, 2 (03) :435-453