Semiconductor quantum dots for application in diode lasers

被引：15

作者：

Grundmann, M

Ledentsov, NN

Kirstaedter, N

Heinrichsdorff, F

Krost, A

Bimberg, D

Kosogov, AO

Ruvimov, SS

Werner, P

Ustinov, VM

Kop'ev, PS

Alferov, ZI

机构：

[1] Tech Univ Berlin, Inst Festkorperphys, D-10623 Berlin, Germany

[2] Max Planck Inst Mikrostrukturphys, D-06120 Halle Saale, Germany

[3] AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia

来源：

THIN SOLID FILMS | 1998年 / 318卷 / 1-2期

关键词：

quantum dots; self-organized epitaxy; diode lasers;

D O I：

10.1016/S0040-6090(97)01144-9

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Recent progress in the epitaxy (molecular beam epitaxy and metal-organic chemical vapor deposition) of strained heterostructures and the use of the Stranski-Krastanow growth mode allows to create spontaneously ordered, defect-free and dense arrays of nano-size islands. Such islands act as electronic quantum dots. In superlattices the islands are ordered in vertical stacks. Using such self-ordered InGaAs/AlGaAs quantum dots we have fabricated diode lasers for which some properties are superior to those of current lasers based on quantum wells. In particular, we have demonstrated low laser threshold current and high temperature stability of the threshold. (C) 1998 Elsevier Science S.A.

引用

页码：83 / 87

页数：5

共 30 条

[1] MULTIDIMENSIONAL QUANTUM WELL LASER AND TEMPERATURE-DEPENDENCE OF ITS THRESHOLD CURRENT [J].