GaN electronics for high power, high temperature applications

被引：97

作者：

Pearton, SJ

Ren, F

Zhang, AP

Dang, G

Cao, XA

Lee, KP

Cho, H

Gila, BP

Johnson, JW

Monier, C

Abernathy, CR

Han, J

Baca, AG

Chyi, JI

Lee, CM

Nee, TE

Chuo, CC

Chu, SNG

机构：

[1] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA

[2] Univ Florida, Dept Chem Engn, Gainesville, FL 32611 USA

[3] Miryang Natl Univ, Dept Mat Engn, Kyungnam, South Korea

[4] Sandia Natl Labs, Albuquerque, NM 87185 USA

[5] Natl Cent Univ, Dept Elect Engn, Chungli 32054, Taiwan

[6] Natl Cent Univ, Dept Phys, Chungli 32054, Taiwan

[7] Lucent Technol, Bell Labs, Murray Hill, NJ 07974 USA

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2001年 / 82卷 / 1-3期

基金：

美国国家科学基金会;

关键词：

GaN; rectifiers; bipolar transistors; MOSFETs;

D O I：

10.1016/S0921-5107(00)00767-4

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A brief review is given of recent progress in fabrication of high voltage GaN and AlGaN rectifiers, GaN/AlGaN heterojunction bipolar transistors and GaN metal-oxide semiconductor field effect transistors. Improvements in epitaxial layer quality and in fabrication techniques have led to significant advances in device performance. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：227 / 231

页数：5

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