SnO2 Nanowire Arrays and Electrical Properties Synthesized by Fast Heating a Mixture of SnO2 and CNTs Waste Soot

被引:16
作者
Li, Zi-Jiong [1 ,2 ]
Qin, Zhen [3 ]
Zhou, Zhi-Hua [2 ]
Zhang, Li-Ying [2 ]
Zhang, Ya-Fei [2 ]
机构
[1] Zhengzhou Univ Light Ind, Dept Phys, Zhengzhou 450007, Peoples R China
[2] Shanghai Jiao Tong Univ, Res Inst Micro Nanometer Sci & Technol, Shanghai 200240, Peoples R China
[3] Coll Math & Informat Sci, N China Inst Water Conservancy & Hydroelect Power, Zhengzhou 450011, Peoples R China
来源
NANOSCALE RESEARCH LETTERS | 2009年 / 4卷 / 12期
基金
中国国家自然科学基金;
关键词
SnO2; nanowires; Semiconducting; Field-effect transistor; TIN OXIDE NANOWIRES; FIELD-EMISSION; GROWTH; CARBON; NANOCRYSTALS; TEMPERATURE; NANORIBBONS; NANOTUBES; TRANSPORT; NANORODS;
D O I
10.1007/s11671-009-9416-5
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
SnO2 nanowire arrays were synthesized by fast heating a mixture of SnO2 and the carbon nanotubes waste soot by high-frequency induction heating. The resultant SnO2 nanowires possess diameters from 50 to 100 nm and lengths up to tens of mircrometers. The field-effect transistors based on single SnO2 nanowire exhibit that as-synthesized nanowires have better transistor performance in terms of transconductance and on/off ratio. This work demonstrates a simple technique to the growth of nanomaterials for application in future nanoelectronic devices.
引用
收藏
页码:1434 / 1438
页数:5
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