Field-induced resistive switching based on space-charge-limited current

被引：160

作者：

Xia, Yidong

He, Weiye

Chen, Liang

Meng, Xiangkang

Liu, Zhiguo ^{[1
]}

机构：

[1] Nanjing Univ, Natl Lab Solid State Microstruct, Nanjing 210093, Peoples R China

[2] Nanjing Univ, Dept Mat Sci & Engn, Nanjing 210093, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2007年 / 90卷 / 02期

基金：

中国国家自然科学基金;

关键词：

D O I：

10.1063/1.2430912

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Polycrystalline (Ba,Sr)(Zr,Ti)O-3 thin films sandwiched between two Pt electrodes have been revealed to exhibit hysteretic current-voltage (I-V) characteristics and resistive switching at room temperature. High- and low-resistance states, as well as a less abrupt state transition, occur during the voltage cycle. The maximum ratio between these two resistance states is about 230. Analyses of I-V behaviors have been executed, and it is proposed that space-charge-limited-current conduction in higher voltage region caused by asymmetric electron trapping centers is responsible for such transition of resistance states. (c) 2007 American Institute of Physics.

引用

页数：3

共 16 条

[11] Resistive switching characteristics and set-voltage dependence of low-resistance state in sputter-deposited SrZrO3:Cr memory films [J].