Characterization of low temperature photo-assisted metal-organic chemical vapor deposited copper films using hexafluoroacetylacetonate copper(I) trimethylvinylsilane as precursor

被引：7

作者：

Wu, YL

Hsieh, MH

Hwang, HL

机构：

[1] Natl Chi Nan Univ, Dept Elect Engn, Nantou 545, Taiwan

[2] Natl Tsing Hua Univ, Inst Elect Engn, Hsinchu 300, Taiwan

来源：

THIN SOLID FILMS | 2005年 / 483卷 / 1-2期

关键词：

copper; chemical vapor deposition (CVD); deposition process; metallization;

D O I：

10.1016/j.tsf.2004.12.010

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

This work demonstrated for the first time low temperature copper (Cu) film deposition by photo-assisted metal-organic chemical vapor deposition (photo-assisted MOCVD) using hexafluoroacetylacetonate copper(l) trimethylvinylsilane (referred to as Cu(hfac)(tmvs)) as precursor. This work found that photo-assisted MOCVD Cu films can be deposited on TaN/tetra-ethylorthosilicate(TEOS)-oxide/Si but not on TEOS-oxide/Si wafers at temperatures as low as 100 degrees C. Cu films grown by photo-assisted MOCVD from Cu(hfac)(tmvs) at 125 degrees C exhibit good qualities, including acceptable electromigration lifetime, lower carbon contamination at the Cu film surface, and excellent step-coverage and trench-filling abilities. (c) 2004 Elsevier B.V. All rights reserved.

引用

页码：10 / 15

页数：6

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