Analytical approximation for perturbation of MOSFET surface potential by polysilicon depletion layer

被引：14

作者：

Gildenblat, G ^{[1
]}

Chen, TL

Bendix, P

机构：

[1] Penn State Univ, Dept Elect Engn, University Pk, PA 16802 USA

[2] LSI Log Corp, Milpitas, CA 95035 USA

来源：

ELECTRONICS LETTERS | 1999年 / 35卷 / 22期

关键词：

D O I：

10.1049/el:19991325

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Compact MOSFET models require a computationally efficient description of the polysilicon depletion effect. An analytical solution is presented for the perturbation of the MOSFET surface potential by the polysilicon depletion region. Unlike earlier closed-form approximations, the new result is valid in all regions of the device operation and is compatible with surface-potential-based MOSFET models.

引用

页码：1974 / 1976

页数：3

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