Tunable polarization response of a planar asymmetric-spiral infrared antenna

被引:13
作者
Boreman, GD [1 ]
Fumeaux, C
Herrmann, W
Kneubühl, FK
Rothuizen, H
机构
[1] Univ Cent Florida, Dept Elect Engn, Ctr Res & Educ Opt & Lasers, Orlando, FL 32816 USA
[2] ETH Zurich, Inst Quantum Elect, CH-8093 Zurich, Switzerland
[3] IBM Corp, Zurich Res Lab, CH-8803 Ruschlikon, Switzerland
关键词
D O I
10.1364/OL.23.001912
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
We present measurements at 10.6 mu m that demonstrate electronic tuning of the polarization response of asymmetric-spiral infrared antennas connected to Ni-NiO-Ni diodes. Continuous variation of the bias voltage applied to the diode results in a rotation of the principal axis of the polarization ellipse of the spiral antenna. A 90 degrees tuning range is measured for a bias voltage that varies from - 160 to + 160 mV. This effect is caused by a small asymmetry of the deposited diode contact or by a variation of the detector capacitance with the applied bias voltage. (C) 1998 Optical Society of America.
引用
收藏
页码:1912 / 1914
页数:3
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  • [1] Polarization response of asymmetric-spiral infrared antennas
    Fumeaux, C
    Boreman, GD
    Herrmann, W
    Rothuizen, H
    Kneubuhl, FK
    [J]. APPLIED OPTICS, 1997, 36 (25): : 6485 - 6490
  • [2] Nanometer thin-film Ni-NiO-Ni diodes for detection and mixing of 30 THz radiation
    Fumeaux, C
    Herrmann, W
    Kneubuhl, FK
    Rothuizen, H
    [J]. INFRARED PHYSICS & TECHNOLOGY, 1998, 39 (03) : 123 - 183
  • [3] HIGH BREAKDOWN VOLTAGE ALAS/INGAAS QUANTUM BARRIER VARACTOR DIODES
    REDDY, VK
    NEIKIRK, DP
    [J]. ELECTRONICS LETTERS, 1993, 29 (05) : 464 - 466
  • [4] CURRENT TRANSPORT IN METAL-SEMICONDUCTOR-METAL (MSM) STRUCTURES
    SZE, SM
    COLEMAN, DJ
    LOYA, A
    [J]. SOLID-STATE ELECTRONICS, 1971, 14 (12) : 1209 - &