Systematic considerations for the patterning of photonic crystal devices by electron beam lithography

被引：15

作者：

Yu, Hejun ^{[1
]}

Yu, Jinzhong ^{[1
]}

Sun, Fei ^{[1
]}

Li, Zhiyong ^{[1
]}

Chen, Shaowu ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China

来源：

OPTICS COMMUNICATIONS | 2007年 / 271卷 / 01期

基金：

中国国家自然科学基金;

关键词：

photonic crystal; e-beam lithography; resist; stitching error; proximity effect correction;

D O I：

10.1016/j.optcom.2006.10.034

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Photonic crystal devices with feature sizes of a few hundred nanometers are often fabricated by electron beam lithography. The proximity effect, stitching error and resist profiles have significant influence on the pattern quality, and therefore determine the optical properties of the devices. In this paper, detailed analyses and simple solutions to these problems are presented. The proximity effect is corrected by the introduction of a compensating dose. The influence of the stitching error is alleviated by replacing the original access waveguides with taper-added waveguides, and the taper parameters are also discussed to get the optimal choice. It is demonstrated experimentally that patterns exposed with different doses have almost the same edge-profiles in the resist for the same development time, and that optimized etching conditions can improve the wall angle of the holes in the substrate remarkably. (c) 2006 Elsevier B.V. All rights reserved.

引用

页码：241 / 247

页数：7

共 24 条

[1] High-Q photonic nanocavity in a two-dimensional photonic crystal [J].