Correlation of resistivity with zinc content in a vapor grown (Cd,Zn)Te:Se

被引：10

作者：

Corregidor, V

Diéguez, E ^{[1
]}

Castaño, JL

Fiederle, M

Babentsov, V

Fauler, A

Benz, K

机构：

[1] Univ Autonoma Madrid, Dept Fis Mat, E-28049 Madrid, Spain

[2] Univ Autonoma Madrid, Dept Fis Aplicada, E-28049 Madrid, Spain

[3] Univ Freiburg, Inst Kristallog, D-79104 Freiburg, Germany

[4] Inst Semicond Phys, UA-03028 Kiev, Ukraine

来源：

APPLIED PHYSICS LETTERS | 2002年 / 81卷 / 27期

关键词：

D O I：

10.1063/1.1533124

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the possibility to grow semi-insulating (Cd,Zn)Te:Se crystals by the modified Markov method (MMM) from the vapor phase. When oriented Cd(Te,Se), seed material was used for. the growth, lattice matching and doping with Se resulted in an increase of resistivity up to several units of 10(9) Omega cm., A homogenous Zn distribution was also observed, The content of Se and Zn in the seed and grown crystals was determined by photoluminescence and energy dispersive analysis by x ray measurements. Resistivity and Zn concentration maps show a good spatial correlation in which the highest values, of resistivity correspond. to the areas of the highest Zn concentration. The main part of the crystals demonstrate a low extinction coefficient in the IR spectral region, except for the Zn inhomogeneity region. (C) 2002 American Institute of Physics. [DOI: 10.1063/1.1533124].

引用

页码：5153 / 5155

页数：3

共 20 条

[1] CHARACTERIZATION OF P-TYPE CDTE BRIDGMAN CRYSTALS BY INFRARED EXTINCTION SPECTRA [J].