A DLTS study of deep levels in the band gap of textured stoichiometric p-CdTe polycrystals

被引：8

作者：

Bobrova, EA ^{[1
]}

Klevkov, YV ^{[1
]}

Medvedev, SA ^{[1
]}

Plotnikov, AF ^{[1
]}

机构：

[1] Russian Acad Sci, PN Lebedev Phys Inst, Moscow 117924, Russia

来源：

SEMICONDUCTORS | 2002年 / 36卷 / 12期

基金：

俄罗斯基础研究基金会;

关键词：

D O I：

10.1134/1.1529243

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Deep-level transient spectroscopy (DLTS) was used to identify a set of deep electronic states in the band gap of textured p-CdTe polycrystals whose composition was almost stoichiometric. Four hole traps and two electron traps were observed. It is shown that the deepest hole trap with a level at E-v + 0.86 eV corresponds to a prevalent defect in this material. Special features of the line shape in the DLTS spectrum and the logarithmic dependence of population of this level on the duration of the filling pulse correspond to an extended defect related most probably to dislocations at the grain boundaries. (C) 2002 MAIK "Nauka / Interperiodica".

引用

页码：1341 / 1346

页数：6

共 17 条

[1]

BERMAN LS, 1981, DEEP LEVEL TRANSIENT

[2] HIGH-FREQUENCY CAPACITANCE-VOLTAGE CHARACTERISTICS OF MOS TUNNEL-DIODES IN PRESENCE OF INTERFACE STATES AND FIXED OXIDE CHARGES [J].

CHATTOPADHYAY, P .

SOLID-STATE ELECTRONICS, 1993, 36 (11) :1641-1644

[3] ELECTRONIC-PROPERTIES OF DEEP LEVELS IN PARA-TYPE CDTE [J].

COLLINS, RT ;

MCGILL, TC .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1983, 1 (03) :1633-1636

[4] CHARACTERISTICS OF METAL-SEMICONDUCTOR CONTACTS FABRICATED BY THE ELECTROLESS DEPOSITION METHOD [J].

DATTA, AK ;

GHOSH, K ;

CHOWDHURY, NKD ;

DAW, AN .

SOLID-STATE ELECTRONICS, 1980, 23 (08) :905-907

[5] ACCURATE EVALUATIONS OF THERMALLY STIMULATED CURRENT CURVES AND DEFECT PARAMETERS FOR CDTE CRYSTALS [J].

ELKOMOSS, SG ;

SAMIMI, M ;

HAGEALI, M ;

SIFFERT, P .

JOURNAL OF APPLIED PHYSICS, 1985, 57 (12) :5313-5319

[6] DLTS STUDY OF THE INFLUENCE OF PLASTIC-DEFORMATION ON DEEP LEVELS IN N-TYPE CDTE [J].

GELSDORF, F ;

SCHROTER, W .

PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 1984, 49 (05) :L35-L41

[7] MINORITY-CARRIER MIS TUNNEL-DIODES AND THEIR APPLICATION TO ELECTRON-VOLTAIC AND PHOTO-VOLTAIC ENERGY-CONVERSION .1. THEORY [J].

GREEN, MA ;

KING, FD ;

SHEWCHUN, J .

SOLID-STATE ELECTRONICS, 1974, 17 (06) :551-561

[8] STUDY OF CLEAVED, OXIDIZED, ETCHED, AND HEAT-TREATED CDTE SURFACES [J].

HARING, JP ;

WERTHEN, JG ;

BUBE, RH ;

GULBRANDSEN, L ;

JANSEN, W ;

LUSCHER, P .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1983, 1 (03) :1469-1472

[9]

HUMMELGEN IA, 1993, APPL PHYS LETT, V62, P2703, DOI 10.1063/1.109237

[10] CHARACTERISTICS OF DEEP LEVELS IN N-TYPE CDTE [J].

KHATTAK, GM ;

SCOTT, CG .

JOURNAL OF PHYSICS-CONDENSED MATTER, 1991, 3 (44) :8619-8634

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