Fabrication of single- or double-row aligned self-assembled quantum dots by utilizing SiO2-patterned vicinal (001)GaAs substrates

被引：10

作者：

Kim, HJ ^{[1
]}

Motohisa, J ^{[1
]}

Fukui, T ^{[1
]}

机构：

[1] Hokkaido Univ, Res Ctr Integrated Quantum Elect, Sapporo, Hokkaido 0608628, Japan

来源：

APPLIED PHYSICS LETTERS | 2002年 / 81卷 / 27期

关键词：

D O I：

10.1063/1.1534385

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We investigated the formation of In0.8Ga0.2As self-assembled quantum dots (SAQDs) grown on SiO2-patterned 1degrees 2degrees, and 5degrees-off (001) GaAs substrates by selective area metalorganic vapor phase. epitaxy technique. The SiO2 patterns were filled with various stripe opening windows along the misorientation direction of the substrates. During the growth of the GaAs buffer layer on the opening regions, the steps on the (001) top facet was affected by the widths of the (001) top facet and the misorientation angles of the substrates. Single- or double-row aligned In0.8Ga0.2As SAQDs having definite interval were successfully fabricated on the (001) top facet With optimized top width and periodicity of step bunching. These results indicate that the selective growth technique of SAQDs by utilizing SiO2-patterned vicinal substrates is promising for nanoelectronic device applications such as single-electron memory devices. (C) 2002 American Institute of Physics. [DOI: 10.1063/1.1534385].

引用

页码：5147 / 5149

页数：3

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