InAsSbP/InAs LEDs for the 3.3-5.5 μm spectral range

被引：28

作者：

Matveev, B

Zotova, N

Karandashov, S

Remennyi, M

Il'inskaya, N

Stus', N

Shustov, V

Talalakin, G

Malinen, J

机构：

[1] AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia

[2] VTT Elect Optoelect Lab, FIN-90571 Oulu, Finland

来源：

IEE PROCEEDINGS-OPTOELECTRONICS | 1998年 / 145卷 / 05期

关键词：

LEDs; mid-infrared applications; optical detection;

D O I：

10.1049/ip-opt:19982303

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Room-temperature LEDs, fabricated from LPE grown InAsSb(P)/InAs heterostructures, are characterised with respect to methane (3.3 mu m), carbon dioxide (4.3 mu m) and nitric oxide (5.3 mu m) optical detection. Output power as high as 50 mu W (I = 1 A, 128 mu s) and FWHM as small as 0.6 mu m have been obtained for the first reported InAsSb LED emitting at 5.5 mu m.

引用

页码：254 / 256

页数：3

共 14 条

[1] Long-wavelength uncooled sources of λ=5-6 μm radiation using graded-index InAsSb(P) layers grown by liquid-phase epitaxy [J].