Room temperature electroluminescence of nanofabricated Si-Si1-xGex quantum dot diodes

被引：17

作者：

Tang, YS ^{[1
]}

Torres, CMS ^{[1
]}

Ni, WX ^{[1
]}

Hansson, GV ^{[1
]}

机构：

[1] LINKOPING UNIV,DEPT PHYS,S-58183 LINKOPING,SWEDEN

来源：

SUPERLATTICES AND MICROSTRUCTURES | 1996年 / 20卷 / 04期

基金：

英国工程与自然科学研究理事会;

关键词：

light emitting diode; Si-SiGe quantum dots; nanofabrication; electroluminescence;

D O I：

10.1006/spmi.1996.0108

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The fabrication and room temperature light emission of a series of 50 nm Si-SiGe quantum dot diodes emitting light at about 1.3 mu m are reported. These diodes are made from molecular beam epitaxially (MBE) grown p-i-n structures with the active region being either a superlattice or a single heterolayer. It was found that the electrical-to-optical power conversion efficiency of the diodes was 0.14%. Possible light emission mechanisms and technological aspects of the work are discussed. (C) 1996 Academic Press Limited

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收藏

页码：505 / 511

页数：7

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